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SEMH10
NPN Silicon Digital Transistor Array Preliminary data * Switching circuit, inverter, interface circuit, driver circuit * Two ( galvanic) internal isolated Transistors with good matching in one package * Built in bias resistor (R1 =2.2k, R2=47k)
C1 6 B2 5 E2 4
4 5 3 6 1 2
R2 R1 TR1 R2 1 E1 2 B1 3 C2
EHA07174
TR2 R1
Type SEMH10
Maximum Ratings Parameter
Marking WH
Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Value 50 50 5 10 100 250 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 C Junction temperature Storage temperature
Thermal Resistance
mA mW C
Junction - soldering point 1)
RthJS
300
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Feb-09-2004
SEMH10
Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 A, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio R1 R1/R2 1.5 2.2 2.9 Vi(on) 0.5 1.1 Vi(off) 0.4 0.8 VCEsat 0.3 hFE 70 IEBO 164 ICBO 100 V(BR)CBO 50 V(BR)CEO 50 typ. max.
Unit
V
nA A V
k
0.042 0.047
0.052 -
AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 pF fT 170 MHz
1) Pulse test: t < 300s; D < 2%
2
Feb-09-2004
SEMH10
DC Current Gain hFE = f (I C) VCE = 5V (common emitter configuration)
10 3
Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20
10 2
mA
hFE
10 2
IC
10 1 10 1 10 0 -1 10
0 1
10
10
mA
10
2
10 0 0
0.1
0.2
0.3
V
0.5
IC
VCEsat
Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration)
10 2
Input off voltage Vi(off) = f (IC ) VCE = 5V (common emitter configuration)
10 1
mA
mA
10 0 10 1
IC
IC
10
-1
10 0 10
-2
10 -1 -1 10
10
0
10
1
V
10
2
10
-3
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
1
Vi(on)
Vi(off)
3
Feb-09-2004
SEMH10
Total power dissipation P tot = f (TS)
300
mW
Ptot
200
150
100
50
0 0
15
30
45
60
75
90 105 120 C
150
TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax / PtotDC = f (tp)
10 3
K/W
10 3
10 2
Ptotmax/ PtotDC
RthJS
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 -1 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
4
Feb-09-2004

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